Intellectual Property Law

US Patent 7626190 - Memristor memory with nanowire transistor

This patent from Infineon Technologies teaches another variation of memristor (i.e. memory resistor) electronics which uses nanowire transistors with resistive switching material. Claim 1 reads:

1. A memory device, comprising:

a transistor comprising at least one nanowire or nanotube or nanofibre and a transistor gate region, the nanowire or nanotube or nanofibre being self-aligned with respect to the transistor gate region;

wherein the memory device is a resistively switching memory device; and

wherein the nanowire or nanotube or nanofibre directly contacts a switching active material of the resistively switching memory device.

Full post as published by TinytechIP on December 06, 2009 (boomark / email).