Intellectual Property Law

US Patent 7872334 - CNT diodes

In order to transform CNT electronics into commercial devices a necessary requirement will be mechanisms for electrostatic discharge protection compatible with the carbon nanotubes. This patent from IBM teaches one such mechanism based on using both p-type and n-type nanotubes forming diode junctions. Claim 1 reads:

1. A diode, comprising:

said diode comprising an anode and a cathode, said anode comprising a p-type single wall carbon nanotube and said cathode comprising an n-type single wall carbon nanotube, said p-type single wall carbon nanotube in direct and constant physical and electrical contact with said n-type single wall carbon nanotube to form a permanent PN junction;

a first metal pad in physical and electrical contact with said p-type single wall carbon nanotube and a second metal pad in physical and electrical contact with said n-type single wall carbon nanotube; and

wherein said p-type single wall carbon nano-tube has an electron-withdrawing charge transfer complex coating.

Full post as published by TinytechIP on January 20, 2011 (boomark / email).