Intellectual Property Law

US Patent 7687841 - Offset gate CNTFET

This patent from Micron Technologies addresses the problem of leakage current between the drain and source of carbon nanotube field effect transistors by placing the gate electrode at an asymmetric position. Claim 1 reads:

1. A transistor, comprising:

a channel formed of at least one carbon nanotube, wherein the channel is in contact with a source and with a drain of the transistor;

a dielectric material proximate to the channel; and

a gate comprising a sidewall on an edge of a pad, wherein the gate is proximate to the dielectric material, wherein the gate is positioned closer to the source than to the drain, and wherein the source and drain are self aligned with respect to the gate and to the pad.

Full post as published by TinytechIP on April 04, 2010 (boomark / email).