Intellectual Property Law

US Patent 7572662 - Fullerene phase change RAM

This patent from Samsung teaches using fullerene to improve the electrical characteristics of electrode contacts in phase change memory. Claim 1 reads:

1. A method of fabricating a phase change RAM (PRAM) comprising:

forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film;

forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material;

forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug; and

sequentially stacking a phase change layer and an upper electrode on the fullerene layer, wherein the fullerene layer contacts the bottom electrode contact plug.

Full post as published by TinytechIP on August 12, 2009 (boomark / email).