Intellectual Property Law

US Patent 7399988 - Wide temperature range quantum dot photodetector

With a rise in temperature quantum dot photodetectors can have a reduction in sensitivity. This patent from Fujitsu teaches a configuration which avoids this problem using a stacked quantum well/embedded quantum dot structure. Claim 1 reads:

1. A photodetecting device having quantum dots, comprising:

a quantum dot structure including a first embedding layer, and quantum dots embedded by said first embedding layer; and

a quantum well structure formed at a location downstream of said quantum dot structure in a direction of flow of electrons which flow perpendicularly to said quantum dot structure during operation of the photodetecting device, said quantum well structure including second and third embedding layers, and

a quantum well layer which is sandwiched between said second and third embedding layers, and whose band gap is smaller than those of said second and third embedding layers.

Full post as published by TinytechIP on July 17, 2008 (boomark / email).