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US Patent 7378701 - Phase change CNT memory

http://www.freepatentsonline.com/7378701.htmlPhase change memory was initially proposed several decades ago by Stanford Ovshinsky but only recently have a variety of other companies been exploring the use of phase change and other materials in new non-volatile memory designs. This patent from Samsung teaches using carbon nanotubes as an interconnect element for phase change memory to achieve higher bit densities. Claim 1 reads:1. An integrated circuit phase changeable memory device comprising:an read more

Full post as published by TinytechIP on May 29, 2008 (boomark / email).